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机译:
Department of Physics and NanoTech Center, Texas Tech University, Lubbock, Texas 79409;
机译:Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates
机译:Study on stress distributions in air-bridged lateral epitaxial grown GaN with low dislocation density
机译:Study on stress distributions in air-bridged lateral epitaxial grown GaN with low dislocation density
机译:来自GaN / Al_(0.05)GA_(0.95)N的紫光发光通过低压MO-VPE在6h-SiC基板上生长的注射二极管