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机译:
Nagoya Univ, Grad Sch Engn, Dept Quantum Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603.;
机译:Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_(3) and SiF_(4)
机译:Microstructure and dielectric properties of silicon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition
机译:Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature
机译:Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor