机译:Si(110)上薄Si缓冲层生长过程中形成的自组织凹坑中Ge岛的优先成核
Michigan Technol Univ, Dept Mat & Met Engn, Houghton, MI 49931, USA, .;
rovidence.org;
Vicinal si(100); Strained layers; Evolution; Defect; Films; Dots; Gaas;
机译:Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)
机译:Atomic H-mediated (Si_(14)/Ge_1)_(20) superlattice buffers for the growth of Si_(0.75)Ge_(0.25) alloy layers with low residual strain
机译:GROWTH OF SPUTTERED-ALUMINUM OXIDE THIN FILMS ON Si (100) AND Si (111) SUBSTRATES WITH Al2O3 BUFFER LAYER
机译:晶格设计的Si
机译:促进相干应变110取向的空穴迁移率Ge–Si核–壳纳米线
机译:LPCVD法对Ge岛外延硅封盖对Si(001)和Si(110)的影响
机译:(110)取向作为Ge上Gaas分子束外延生长的优选取向,si上的Gap和类似的Zincblende-on-Diamond系统