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机译:
Dipartimento di Energetica, Universita degli Studi "La Sapienza" and INFM unita di Romal, via A. Scarpa 14, 00161 Roma, Italy;
机译:Crosshyphen;sectional high resolution electron microscopy of Zn+implanted and lowhyphen;power pulsedhyphen;laser annealed GaAs
机译:Transmission electron microscopy and high resolution electron microscopy studies of shallow (Rpsim;20 nm) As and B implanted and electron beam annealed silicon
机译:High resolution transmission electron microscopy study of Se+hyphen;implanted and annealed GaAs: Mechanisms of amorphization and recrystallization
机译:Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition