Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach

Chengmin Li; Haoze Luo; Chushan LiWuhua LiHuan YangXiangning He

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Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach

机译：基于温度敏感光参数（TSOP）方法的SiC功率mosfets在线结温提取

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摘要

Accurate information of the junction temperature of SiC power mosfet s ensures safe operation and helps reliability assessment of the devices. In this pape

机译：SiC功率mosfet s的结温信息可确保安全运行，并有助于器件的可靠性评估。在这个教皇

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来源
《IEEE Transactions on Power Electronics》 |2019年第10期|10143-10152|共10页
作者
Chengmin Li; Haoze Luo; Chushan LiWuhua LiHuan YangXiangning He;
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作者单位

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

Zhejiang University-University of Illinois at Urbana-Champaign Institute, Zhejiang University, Hangzhou, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类无线电电子学、电信技术;
关键词
Silicon carbide; MOSFET; Temperature measurement; Temperature sensors; Junctions; Spontaneous emission; P-i-n diodes;

机译：碳化硅;MOSFET;温度测量;温度传感器;交汇点;自发排放;P-i-n二极管;

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1. Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction [J] . Xi Jiang, Jun Wang, Hengyu YuJianjun ChenZhong ZengXin YangZ. John Shen IEEE Transactions on Power Electronics . 2021,第4期

机译：Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction
2. Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature [J] . Fengtao Yang, Laili Wang, Hang KongMengyu ZhuXingshuo LiuXiaohui LuMengjie QinTongyu ZhangYongmei GanLixin Jia IEEE Transactions on Power Electronics . 2023,第1期

机译：Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature
3. Online Junction Temperature Estimation Method for SiC MOSFETs Based on the DC Bus Voltage Undershoot [J] . Yanyong Yang, Yang Wu, Xiaofeng DingPinjia Zhang IEEE Transactions on Power Electronics . 2023,第2期

机译：Online Junction Temperature Estimation Method for SiC MOSFETs Based on the DC Bus Voltage Undershoot

Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach

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