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机译:
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan, .;
rovidence.org;
Molecular-beam epitaxy; Barrier height; Al0; 48in0; 52as; Layers;
机译:Rapid thermal annealing effects on step-graded InAlAs buffer layer and In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As metamorphic high electron mobility transistor structures on GaAs substrates
机译:CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS
机译:CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS
机译:Ⅲ-Ⅴ/Ge MOS Transistor Technologies for Future ULSI
机译:Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor
机译:健康危害评估报告No.HETa-88-136-1945,miller Thermal Technologies,Inc.,appleton,Wisconsin