Strain relaxation and threading dislocation density in helium-implanted and annealed Si_(1-x)Ge_(x)/Si(100) heterostructures

J. Cai; P. M. Mooney; S. H. ChristiansenH. ChenJ. O. ChuJ. A. Ott

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Strain relaxation and threading dislocation density in helium-implanted and annealed Si_(1-x)Ge_(x)/Si(100) heterostructures

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Strain relaxation and threading dislocation densities in Si_(1-x)Ge_(x) (0.15

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《Journal of Applied Physics 》 |2004年第10期| 5347-5351| 共5页
作者
J. Cai; P. M. Mooney; S. H. ChristiansenH. ChenJ. O. ChuJ. A. Ott;
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IBM Research and Development Center, T. J. Watson Research Center, Yorktown Heights, New York 10598;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学 ;
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机译：Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si_(1-x)Ge_(x) buffer layers on Si (100) substrates
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机译：Characterization of strained Si/Si_(1-x)Ge_(x)/Si heterostructures annealed in oxygen or argon
3. Strain-induced diffusion in a strained Si_(1-x)Ge_(x)/Si heterostructure [J] . Y. S. Lim, J. Y. Lee, H. S. Kim Applied physics letters . 2000 ,第25期

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机译：通过添加薄的Ti中间层在应变Si_（0.8）Ge_（0.2）/ Si（100）上形成高取向外延Ni（Si_（0.8）Ge_（0.2））
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Strain relaxation and threading dislocation density in helium-implanted and annealed Si_(1-x)Ge_(x)/Si(100) heterostructures

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