Self-consistent calculations for n-type hexagonal SiC inversion layers

摘要

Surface band structure calculations are performed for different orientations of hexagonal silicon carbide (nH-SiC). The 4H-SiC and 6H-SiC hexagonal polytypes are considered. The subband structure perpendicular to an oxide-SiC interface is determined self-consistently with the confining transverse potential. Investigations have been performed in the range of weak/strong inversion and high/low temperatures. The (0110), (1120), (0338), and (0001) surfaces are compared for both 4H-SiC and 6H-SiC. Each orientation is characterized based on its two-dimensional nature, its degree of anisotropy parallel to the oxide, and the spatial extent of mobile electrons from the oxide-semiconductor interface.