Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

摘要

This paper proposes a physics-based model based on possible chemical processes responsible for the resistive switching of sputter-deposited silicon oxide films. Diffusion–reaction differential equations are utilized to pursue physical and chemical origins of the switching phenomenon. Based on the theoretical model, the chemical reaction process is analytically and numerically solved, and an analytical model is proposed to elucidate the phenomenon. Theoretical simulation results are examined from the point of view of suitability of parameter values, and the analytical model is used to interpret the simulation results. Simulation results greatly assist in understanding the switching processes of silicon oxide films; that is, the diffusion processes of hydrogen and water molecules primarily rule the switching processes, and the displacement of oxygen atoms is assisted by those processes. The analytical model predicts that high-speed switching requires a large number of traps in the oxide, a relatively large binding energy, and a low leakage current; all of them can easily be satisfied for sputter-deposited oxide films. A combination of the theoretical simulation model and the analytical model gives a guideline of how the sputter-deposited silicon oxide films can be made suitable for high-speed resistive switching applications.