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机译:
Mobility transistor structures; Anisotropic strain relaxation; Quantum-well structures; Gaas substrate; Graded inxga1-xas; High-performance; Layers; Surface; Heterostructures; Ingaas/inp;
机译:InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gashyphen;source molecular beam epitaxy
机译:Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer
机译:Structural characterization of SiGe step graded buffer layers grown on prestructured Si{100} substrates by molecular beam epitaxy