Deep levels and trapping mechanisms in chemical vapor deposited diamond

摘要

Detector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300-650 K. Two previously unknown defects have been identified, characterized by activation energies E_(1)=1.14 eV and E_(2)=1.23 eV, cross sections of about σ≈10~(-13) cm~(2) and concentrations of N_(t)≈10~(16) cm~(-3). They have been clearly observed by PICTS and isolated in TSC measurements by use of a fractional annealing cycle in the temperature range 300-400 K. Due to their trap parameters, in particular the high cross section, the levels corresponding to E_(1) and E_(2) are characterized by capture times of the order of 10-100 ps. A dominant TSC peak observed at ≈500 K has been also investigated and has been resolved into four components with activation energies of the order of 1 eV and cross sections in the range 10~(-19)-10~(-17) cm~(2). Three of these levels exhibit a fast capture rate (0.1-10 ns) in spite of their small cross sections, due to their high concentration in the investigated sample. Correlating our results with room temperature charge collection studies, we propose that the observed traps with their fast capture rates can be effective in limiting the carrier lifetimes and, consequently, the charge collection efficiency of CVD diamond particle detectors