机译:双层Ag纳米晶之间HfO_(2)界面层在非易失性存储器件应用中的厚度调制效应
Department of Electrical Engineering and Computer Sciences, Daejeon 305-701, Republic of Korea;
机译:Memory Properties of Nickel Silicide Nanocrystal Layer for Possible Application to Nonvolatile Memory Devices
机译:Memory Properties of Nickel Silicide Nanocrystal Layer for Possible Application to Nonvolatile Memory Devices
机译:Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application
机译:Thickness scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional mos2 Layers