METAL SITE DOPING IN THE NARROW-GAP FeGa_3 SEMICONDUCTOR

摘要

The effects and feasibility of metal site doping of the tetragonal diamagnetic insulator FeGa_3 by Fe/Co, Fe/Mn, and Co/Ni substitutions were investigated by the X-ray electron-probe microanalysis, electrical resistivity, specific heat, and magnetic susceptibility measurements. The substitution of Co for Fe in FeGa_3 does not change its structural type and preserves the structure of the binary parent compound (FeGa_3), whereas the solubility of Mn in the FeGa_3 -type structure is limited to 3 at.% and a finite solubility of Ni in CoGa3 is not detected.