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机译:
Ind Technol Inst, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India;
Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci Mat, Seoul 151742, South Korea;
RAY PHOTOELECTRON-SPECTROSCOPY; ELECTRICAL-PROPERTIES; FILMS; OXIDE; INTERFACE; SILICON; TECHNOLOGY; SI(100); VOLTAGE; DEVICES;
机译:Characteristics of ZrO2 gate dielectric deposited using Zr t-butoxide and Zr(NEt2)(4) precursors by plasma enhanced atomic layer deposition method
机译:Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric
机译:The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films