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机译:
Department of Physics, University of Virginia, Virginia 22904, USA;
Department of Materials Science and Engineering, University of Virginia, Virginia 22904, USA;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
机译:Effects of rapid thermal annealing on the formation of shallowp+njunction by implanting BF2+ions into thin metal films on Si substrate. I. Thin titanium films
机译:Effects of rapid thermal annealing on the formation of shallowp+njunction by implanting BF2+ions into thin metal films on Si substrate. II. Thin cobalt films
机译:Synthesis of GaN_(x)As_(1-x) thin films by pulsed laser melting and rapid thermal annealing of N~(+)-implanted GaAs
机译:Mn_(1-x)Fe_(1 + x)P_(0.6)Si_(0.3)Ge_(0.1)化合物的转变金属比的变化
机译:Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor