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Influence of interface structure on mass transport in phase boundaries between different ionic materials Experimental studies and formal considerations

机译:界面结构对不同离子材料之间相界中质量输运的影响实验研究和形式考虑

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摘要

Internal and external interfaces in solids exhibit completely different transport properties compared to the bulk. Transport parallel to grain or phase boundaries is usually strongly enhanced. Transport perpendicular to an interface is usually blocked, i.e., transport across an interface is often much slower. Due to the high density of interfaces in modern micro-and nanoscaled devices, a severe influence on the total transport properties can be expected. In contrast to diffusion in metal grain boundaries, transport phenomena in boundaries of ionic materials are still less understood. The specific transport properties along metal grain boundaries are explained by structural factors like packing densities or dislocation densities in the interface region. In most studies dealing with ionic materials, the interfacial transport properties are merely explained by the influence of space charge regions. In this study the influence of the interface structure on the interfacial transport properties of ionic materials is discussed in analogy to metallic materials. A qualitative model based on the density of misfit dislocations and on interfacial strain is introduced for (untilted and untwisted) phase boundaries. For experimental verification, the interfacial ionic conductivity of different multilayer systems consisting of stabilised ZrO2 and an insulating oxide is investigated as a funtion of structural mismatch. As predicted by the model, the interfacial conductivity increases when the lattice mismatch is increased.
机译:与本体相比,固体中的内部和外部界面显示出完全不同的传输特性。通常会大大增强平行于晶界或相界的传输。垂直于接口的传输通常被阻止,即跨接口的传输通常要慢得多。由于现代微米级和纳米级设备中界面的高密度,预计会对总传输性能产生严重影响。与在金属晶粒边界中扩散相反,在离子材料边界中的迁移现象仍然很少被理解。沿金属晶粒边界的特定传输特性由界面区域中的堆积密度或位错密度等结构因素解释。在大多数有关离子材料的研究中,界面传输特性仅由空间电荷区域的影响来解释。在这项研究中,与金属材料类似,讨论了界面结构对离子材料界面传输性能的影响。针对(未扭曲和未扭曲的)相边界引入了基于失配位错密度和界面应变的定性模型。为了进行实验验证,研究了由稳定的ZrO2和绝缘氧化物组成的不同多层系统的界面离子电导率,以作为结构失配的函数。如模型所预测的,当晶格失配增加时,界面电导率增加。

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