机译:原子层沉积Al2O3和(Ta2O5)(0.12)(Al2O3)(0.88)栅极电介质对GaN封顶AlGaN/GaN金属氧化物半导体高电子迁移率晶体管特性的比较
Univ Liverpool, Sch Engn, Dept Mech Mat & Aerosp Engn, Liverpool L69 3GH, Merseyside, England;
Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England;
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
机译:AlGaN/AlN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor with Annealed Al_2O_3 Gate Dielectric
机译:AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped as a Gate Dielectric
机译:Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition