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Measurement of finite-frequency current statisticsin a single-electron transistor

机译:单电子晶体管中有限频率电流统计的测量

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Electron transport in nanoscale structures is strongly influenced by the Coulomb interactionthat gives rise to correlations in the stream of charges and leaves clear fingerprints in thefluctuations of the electrical current. A complete understanding of the underlying physicalprocesses requires measurements of the electrical fluctuations on all time and frequencyscales, but experiments have so far been restricted to fixed frequency ranges, as broadbanddetection of current fluctuations is an inherently difficult experimental procedure. Here wedemonstrate that the electrical fluctuations in a single-electron transistor can be accuratelymeasured on all relevant frequencies using a nearby quantum point contact for on-chip realtime detection of the current pulses in the single-electron device. We have directly measuredthe frequency-dependent current statistics and, hereby, fully characterized the fundamentaltunnelling processes in the single-electron transistor. Our experiment paves the way for futureinvestigations of interaction and coherence-induced correlation effects in quantum transport.
机译:纳米结构中的电子传输受到库仑相互作用的强烈影响,库仑相互作用会引起电荷流的相关性,并在电流的波动中留下清晰的指纹。要全面了解潜在的物理过程,需要测量所有时间和频率范围内的电气波动,但是到目前为止,由于宽带检测电流波动是固有的难题,因此实验仅限于固定频率范围。在此证明,可以使用附近的量子点触点在片上实时检测单电子器件中的电流脉冲,从而在所有相关频率上准确测量单电子晶体管中的电波动。我们已经直接测量了与频率相关的电流统计数据,从而充分表征了单电子晶体管中的基本隧穿过程。我们的实验为未来研究量子传输中相互作用和相干诱导的相关效应铺平了道路。

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