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Effects of Intra- and Interband Transitions on Electron-Phonon Coupling and Electron Heat Capacity After Short-Pulsed Laser Heating

机译:带内和带间跃迁对短脉冲激光加热后电子声子耦合和电子热容的影响

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摘要

This work considers the effects of intra- and direct interband transitions on electron heat capacity and the electron-phonon coupling factor in metals. In the event of an interband transition, the population of the electron bands around the Fermi level will change, affecting the electron density of states and subsequently the thermophysical properties. In the event of photon-induced interband transitions, this repopulation can occur even at relatively low temperatures. This introduces a photon energy-dependent population term into density of states calculations when examining the effects of direct interband transitions on electron heat capacity and the electron-phonon coupling factor in temperature regimes where traditionally only intraband transitions are considered. Example calculations are shown for copper and the two-temperature model is solved using the interband-dependent values of electron heat capacity and electron-phonon coupling factor to examine the effect of these transitions on the transient electron temperature after short-pulsed laser heating.
机译:这项工作考虑了带内和直接带间跃迁对金属中电子热容量和电子-声子耦合因子的影响。如果发生带间跃迁,费米能级附近的电子带的数量将发生变化,从而影响态的电子密度,进而影响热物理性质。在光子引起的带间跃迁的情况下,即使在相对较低的温度下,也可能发生这种重新填充。当在传统上仅考虑带内跃迁的温度状态下检查带间直接跃迁对电子热容量和电子-声子耦合因子的影响时,这将光子能量相关的总体项引入状态密度计算中。给出了铜的示例计算,并使用带间相关的电子热容量和电子-声子耦合因子来求解两温模型,以检查这些转变对短脉冲激光加热后瞬态电子温度的影响。

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