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Localization in silicon nanophotonic slow-light waveguides

机译:硅纳米光子慢光波导中的定位

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Slowing down light on a chip can lead to the development of optical buffers(1), filters(2,3) and memory elements(4) useful for optical interconnects and for resonantly enhanced chip-based nonlinear optics(5,6). Several approaches to slow light rely on the phenomenon of light interference in a sequence of coupled resonators(1-4,7-11); however, light interference is also responsible, in disordered structures, for the localization of light, an effect particularly prominent in one-dimensional devices(12,13). Until now, the length of the waveguides investigated has been less than the localization length. Here we report the first observation of light localization in compact silicon nanophotonic slow-light waveguides consisting of long sequences of coupled resonators. Our results show that disorder limits how much light can be slowed, and that localization leads to spatially concentrated and locally trapped light in a quasi-one-dimensional waveguide at wavelengths near the band edge.
机译:降低芯片上的光会导致光学缓冲区(1),滤波器(2,3)和存储元件(4)的发展,这些缓冲区可用于光学互连和共振增强的基于芯片的非线性光学(5,6)。减慢光的几种方法依赖于一系列耦合谐振器中的光干扰现象(1-4,7-11);然而,在无序结构中,光干扰也是造成光局部化的原因,这一效应在一维设备中尤为突出(12,13)。到目前为止,所研究的波导的长度一直小于定位长度。在这里,我们报告紧凑的硅纳米光子慢光波导中的光定位的首次观察,该波导由耦合谐振器的长序列组成。我们的结果表明,无序限制了可以减慢多少光,并且局部化导致在准一维波导中接近带边缘的波长处的空间集中和局部捕获的光。

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