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Visualization of the emergence of the pseudogap state and the evolution to superconductivity in a lightly hole-doped Mott insulator

机译:轻空穴掺杂Mott绝缘子中伪能隙状态的出现和超导电性的可视化

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Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms seem paramount. Hole doping first destroys the Mott state, yielding a weak insulator where electrons localize only at low temperatures without a full energy gap. At higher doping levels, the ' pseudogap', a weakly conducting state with an anisotropic energy gap and intra-unit-cell breaking of 90 ° rotational (C 4v) symmetry, appears. However, a direct visualization of the emergence of these phenomena with increasing hole density has never been achieved. Here we report atomic-scale imaging of electronic structure evolution from the weak insulator through the emergence of the pseudogap to the superconducting state in Ca _(2-x)Na _xCuO _2Cl _2. The spectral signature of the pseudogap emerges at the lowest doping level from a weakly insulating but C _(4v)-symmetric matrix exhibiting a distinct spectral shape. At slightly higher hole density, nanoscale regions exhibiting pseudogap spectra and 180 ° rotational (C _(2v)) symmetry form unidirectional clusters within the C _(4v)-symmetric matrix. Thus, hole doping proceeds by the appearance of nanoscale clusters of localized holes within which the broken-symmetry pseudogap state is stabilized. A fundamentally two-component electronic structure then exists in Ca _(2-x)Na _xCuO _2Cl _2 until the C _(2v)-symmetric clusters touch at higher doping levels, and the long-range superconductivity appears.
机译:超导电性从具有空穴掺杂的铜酸盐反铁磁莫特状态出现。尽管氧原子状态的变化似乎是最重要的,但最终的电子结构仍无法理解。空穴掺杂首先破坏了莫特状态,产生了一个弱的绝缘体,在该绝缘体中,电子仅在低温下定位而没有完整的能隙。在较高的掺杂水平下,会出现“伪间隙”,即具有各向异性能隙和90°旋转(C 4v)对称性的晶胞内破裂的弱导电状态。但是,从未实现这些现象随孔密度的增加而直接显现出来。在这里,我们报告了在Ca _(2-x)Na _xCuO _2Cl _2中从弱绝缘体通过伪间隙的出现到超导状态的电子结构演化的原子级成像。伪间隙的光谱特征出现在最低掺杂水平时,来自弱绝缘但呈C_(4v)对称的对称矩阵,呈现出明显的光谱形状。在稍微更高的空穴密度下,表现出伪能隙谱和180°旋转(C _(2v))对称性的纳米级区域在C _(4v)对称矩阵内形成单向簇。因此,通过出现局部对称的假间隙状态稳定的局部空穴的纳米级簇来进行空穴掺杂。然后在Ca _(2-x)Na _xCuO _2Cl _2中存在基本为两组分的电子结构,直到C _(2v)对称簇以更高的掺杂水平接触,并出现了远距离超导性。

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