Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device

摘要

We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 x 10(11)cm(-2), respectively. This metal - oxide - semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.