Magnetoresistance of oblique angle deposited multilayered Co/Cu nanocolumns measured by a scanning tunnelling microscope

摘要

In this work we present the first magnetoresistance measurements on multilayered vertical Co(similar to 6 nm)/Cu(similar to 6 nm) and slanted Co(x nm)/Cu(x nm) (with x approximate to 6, 11, and 16 nm) nanocolumns grown by oblique angle vapour deposition. The measurements are performed at room temperature on the as-deposited nanocolumn samples using a scanning tunnelling microscope to establish electronic contact with a small number of nanocolumns while an electromagnet generates a time varying (0.1 Hz) magnetic field in the plane of the substrate. The samples show a giant magnetoresistance (GMR) response ranging from 0.2 to 2%, with the higher GMR values observed for the thinner layers. For the slanted nanocolumns, we observed anisotropy in the GMR with respect to the relative orientation (parallel or perpendicular) between the incident vapour flux and the magnetic field applied in the substrate plane. We explain the anisotropy by noting that the column axis is the magnetic easy axis, so the magnetization reversal occurs more easily when the magnetic field is applied along the incident flux direction (i. e., nearly along the column axis) than when the field is applied perpendicular to the incident flux direction.