The level set method, introduced by Osher and Sethian (1988 J. Comput. Phys. 79 12-49), has recently become popular in the simulation of etching, deposition and photolithography processes in semiconductor manufacturing, as it is a highly robust and accurate computational technique for tracking moving interfaces. In this paper, the level set approach is applied to focused ion beam fabrication, allowing for the first time the simulation of targets with sub-regions that change their connectivity during processing. It is implemented in the code AMADEUS-level set (advanced modelling and design environment for sputter processes), which is capable of simulating surface topography changes in two dimensions taking re-deposition fluxes into account. We present two examples of comparisons between simulation and experiment that demonstrate the predictive capability of the code.
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机译：由Osher和Sethian（1988 J. Comput。Phys。79 12-49）引入的水平设置方法最近在半导体制造中的蚀刻，沉积和光刻工艺的仿真中变得很流行，因为它具有高度的鲁棒性和准确性。跟踪移动界面的计算技术。在本文中，将水平集方法应用于聚焦离子束制造中，这首次允许模拟具有子区域的目标，这些子区域在处理过程中会改变其连接性。它在代码AMADEUS级别集（用于溅射过程的高级建模和设计环境）中实现，该功能能够在考虑重新沉积通量的情况下模拟二维表面形貌变化。我们提供了两个模拟与实验比较的示例，它们演示了代码的预测能力。
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