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Tuning the energy bandgap of CdSe nanocrystals via Mg doping

机译:通过Mg掺杂调节CdSe纳米晶体的能带隙

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CdSe nanocrystals with a zinc blende structure allowed apparent Mg doping (approx 9.8 at. percent). Inverse micelles were formed at a low temperature as templatcs for the zinc blende CdSe nanocrystals, and paraffin oil and oleic acid were used as a solvent and a surfactant, respectively. The Mg doping was shown by energy dispersive x-ray spectroscopy (EDS) and inductively coupled plasma (ICP) atomic emission analyses. Although the particle size of the CdSe and Mg-doped CdSe nanocrystals were approx 6 and approx 8 nm, respectively, the Mg-doped ones show the obvious blueshift in the UV-visible absorption spectra due to the increase in the bulk energy bandgap, which is decisive evidence for the real Mg doping in the CdSe lattices. The Mg-doped CdSe nanocrystals also showed the blueshift in the photoluminescence (PL) spectra, and their PL intensity was comparable to or even higher than that of the undoped CdSe. This impurity doping using the zinc blende structure is suggested as a simple and effective way to tune the energy bandgap of CdSe nanocrystals and, in turn, to control their light emission colour.
机译:具有锌共混物结构的CdSe纳米晶体可实现明显的Mg掺杂(约9.8 at。%)。作为低温共混物CdSe纳米晶体的模板,在低温下形成了反胶束,石蜡油和油酸分别用作溶剂和表面活性剂。通过能量色散X射线光谱(EDS)和电感耦合等离子体(ICP)原子发射分析显示了Mg掺杂。尽管CdSe和Mg掺杂的CdSe纳米晶体的粒径分别约为6和8 nm,但由于体能带隙的增加,Mg掺杂的晶体在UV-可见光吸收光谱中表现出明显的蓝移。是CdSe晶格中真正的Mg掺杂的决定性证据。掺Mg的CdSe纳米晶体在光致发光(PL)光谱中也显示出蓝移,其PL强度与未掺杂的CdSe相当或什至更高。建议使用锌共混物结构进行这种杂质掺杂,作为调节CdSe纳米晶体的能带隙并进而控制其发光颜色的简单有效的方法。

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