Phase-sensitive lock-in imaging of surface densities of states

摘要

A new way of imaging the local density of states has been devised through a combination of the constant-height scanning tunnelling microscopy operational mode and lock-in techniques. We have obtained current images simultaneously with real space dynamical conductance maps (dI/dV) for energies around the Fermi level, on the Si(111)-(7 X 7) surface. We reconstructed the normalized dynamical conductance spectra-(dI/dV)/(I/V). Since the (dI/dV)/(I/V) curves are closely related to the local densities of states, we compared their sum over the unit cell to photoelectron spectra and theoretical calculations. We find that the results are in good agreement. Consequently, the extent of localization of surface electronic states at lattice positions was determined.