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Uniform and selective CVD growth of carbon nanotubes and nanofibres on arbitrarily microstructured silicon surfaces

机译:碳纳米管和纳米纤维在任意微结构化的硅表面上的均匀且选择性的CVD生长

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摘要

Carbon nanotubes (CNTs) and nanofibres (CNFs) are grown on bulk-micromachined silicon surfaces by thermal and plasma-enhanced chemical vapour deposition (PECVD), with catalyst deposition by electron beam evaporation or from a colloidal solution of cobalt nanoparticles. Growth on the peaked topography of plasma-etched silicon 'micrograss' supports, as well as on sidewalls of vertical structures fabricated by deep-reactive ion etching demonstrates the performance of thermal CVD and PECVD in limiting cases of surface topography. In thermal CVD, uniform films of tangled single-walled CNTs (SWNTs) coat the structures despite oblique-angle effects on the thickness of the catalyst layers deposited by e-beam evaporation. In PECVD, forests of aligned CNFs protrude from areas which are favourably wet by the colloidal catalyst, demonstrating selective growth based on surface texture. These surface preparation principles can be used to grow a wide variety of nanostructures on microstructured surfaces having arbitrary topography, giving substrates with hierarchical microscale and nanoscale surface textures. Such substrates could be used to study cell and neuronal growth, influence liquid-solid wetting behaviour, and as functional elements in microelectronic and micromechanical devices.
机译:碳纳米管(CNTs)和纳米纤维(CNFs)通过热和等离子体增强化学气相沉积(PECVD)在本体微机械加工的硅表面上生长,通过电子束蒸发或钴纳米颗粒的胶体溶液沉积催化剂。在等离子刻蚀的硅“微草”支撑物的峰值形貌上以及通过深度反应离子刻蚀制造的垂直结构的侧壁上的生长,证明了在有限的表面形貌情况下热CVD和PECVD的性能。在热CVD中,尽管斜角影响了电子束蒸发沉积的催化剂层的厚度,但缠结的单壁CNT(SWNT)的均匀膜覆盖了结构。在PECVD中,排列整齐的CNF的森林从有利地被胶体催化剂润湿的区域伸出,表明了基于表面纹理的选择性生长。这些表面制备原理可用于在具有任意形貌的微结构化表面上生长各种纳米结构,从而为基材提供分层的微尺度和纳米尺度的表面纹理。此类底物可用于研究细胞和神经元的生长,影响液固润湿行为,并可作为微电子和微机械设备中的功能元件。

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