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首页> 外文期刊>Nanotechnology >Control to synthesize Bi2S3 nanowires by a simple inorganic-surfactant-assisted solvothermal process
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Control to synthesize Bi2S3 nanowires by a simple inorganic-surfactant-assisted solvothermal process

机译:通过简单的无机表面活性剂辅助溶剂热法控制合成Bi2S3纳米线

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摘要

The large-scale synthesis of uniform Bi_2S_3 nanowires has been successfully synthesized by a solvothermal method adopting an inorganic-surfactant (BiCl_4~--CTA+) lamellar structure as precursor. X-ray diffraction (XRD), hish-resolution transmission electron microscopy (HRTEM), and electron diffraction (ED) results show that the as-synthesized samples are orthorhombic-structured B12S3 single-crystal nanowires. The morphologies and structure of the 61283 nanowires have been characterized using transmission electron microscopy (TEM). In addition, studies of nanowire growth as a function of growth time have shown that nanowire length is directly proportional to growth time. The efficient method can be used to synthesize other III-VI sulfides. The growth mechanism was also discussed in our paper.
机译:采用无机表面活性剂(BiCl_4〜--CTA +)层状结构为溶剂溶剂热法成功合成了Bi_2S_3纳米线。 X射线衍射(XRD),高分辨透射电子显微镜(HRTEM)和电子衍射(ED)结果表明,合成后的样品为正交晶结构的B12S3单晶纳米线。 61283纳米线的形貌和结构已使用透射电子显微镜(TEM)进行了表征。另外,对纳米线生长与生长时间的函数关系的研究表明,纳米线的长度与生长时间成正比。有效的方法可用于合成其他III-VI硫化物。我们的论文还讨论了增长机制。

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