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首页> 外文期刊>Nano letters >Bias-Induced Photoluminescence Quenching of Single Colloidal Quantum Dots Embedded in Organic Semiconductors
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Bias-Induced Photoluminescence Quenching of Single Colloidal Quantum Dots Embedded in Organic Semiconductors

机译:偏压嵌入有机半导体中的单个胶体量子点的光致猝灭。

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We demonstrate reversible quenching of the photoluminescence from single CdSe/ZnS colloidal quantum dots embedded in thin films of the molecular organic semiconductor N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) in a layered device structure.Our analysis,based on current and charge carrier density,points toward field ionization as the dominant photoluminescence quenching mechanism.Blinking traces from individual quantum dots reveal that the photoluminescence amplitude decreases continuously as a function of increasing forward bias even at the single quantum dot level.In addition,we show that quantum dot photoluminescence is quenched by aluminum tris(8-hydroxyquinoline) (Alq3) in chloroform solutions as well as in thin solid films of Alq3 whereas TPD has little effect.This highlights the importance of chemical compatibility between semiconductor nanocrystals and surrounding organic semiconductors.Our study helps elucidate elementary interactions between quantum dots and organic semiconductors,knowledge needed for designing efficient quantum dot organic optoelectronic devices.
机译:我们证明了嵌入分子有机半导体N,N'-二苯基-N,N'-双(3-甲基苯基)-(1,1'-联苯)薄膜中的单个CdSe / ZnS胶体量子点的光致发光可逆淬灭)-4,4'-二胺(TPD)在分层的器件结构中。我们基于电流和电荷载流子密度的分析指出场离子化是主要的光致发光猝灭机理。单个量子点的闪烁痕迹表明光致发光幅度甚至在单个量子点水平上,随着正向偏压的增加而连续降低。此外,我们表明,量子点光致发光被氯仿溶液中的三(8-羟基喹啉)铝(Alq3)淬灭,并且在Alq3而TPD的影响很小,这突出了半导体纳米晶体与周围有机半导体之间化学相容性的重要性。我们的研究有助于阐明量子点之间的基本相互作用量子点和有机半导体,这是设计有效的量子点有机光电器件所需的知识。

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