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Loosening Quantum Confinement: Observation of Real Conductivity Caused by Hole Polarons in Semiconductor Nanocrystals Smaller than the Bohr Radius

机译:松散的量子限制:观察比玻尔半径小的半导体纳米晶体中的空穴极化子引起的实际电导率

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We report on the gradual evolution of the conductivity of spherical CdTe nanocrystals of increasing size from the regime of strong quantum confinement with truly discrete energy levels to the regime of weak confinement with closely spaced hole states. We use the high-frequency (terahertz) real and imaginary conductivities of optically injected carriers in the nanocrystals to report on the degree of quantum confinement. For the smaller CdTe nanocrystals (3 nm < radius < 5 nm), the complex terahertz conductivity is purely imaginary. For nanocrystals with radii exceeding 5 nm, we observe the onset of real conductivity, which is attributed to the increasingly smaller separation between the hole states. Remarkably, this onset occurs for a nanocrystal radius significantly smaller than the bulk exciton Bohr radius a_B?7nm and cannot be explained by purely electronic transitions between hole states, as evidenced by tight-binding calculations. The real-valued conductivity observed in the larger nanocrystals can be explained by the emergence of mixed carrier-phonon, that is, polaron, states due to hole transitions that become resonant with, and couple strongly to, optical phonon modes for larger QDs. These polaron states possess larger oscillator strengths and broader absorption, and thereby give rise to enhanced real conductivity within the nanocrystals despite the confinement.
机译:我们报告了球形CdTe纳米晶体电导率的逐渐演变,从具有真正离散的能级的强量子约束体制到具有紧密间隔的空穴态的弱约束体制。我们使用纳米晶体中光学注入的载流子的高频(太赫兹)实和虚电导率来报告量子约束的程度。对于较小的CdTe纳米晶体(3 nm <半径<5 nm),纯太赫兹电导率是虚构的。对于半径超过5 nm的纳米晶体,我们观察到实际电导率的开始,这归因于空穴状态之间的间隔越来越小。显着地,这种发生在纳米晶半径显着小于本体激子玻尔半径a_B≥7nm的情况下发生,并且不能通过紧密结合计算所证明的空穴状态之间的纯电子跃迁来解释。在较大的纳米晶体中观察到的实值电导率可以通过混合的载流子-声子的出现来解释,即极化子,是由于空穴跃迁引起的状态,空穴跃迁与较大的QD的光学声子模共振并强烈耦合。这些极化子态具有较大的振荡器强度和较宽的吸收率,因此尽管受到限制,但仍在纳米晶体内提高了真实电导率。

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