Raman spectroscopy and in situ raman spectroelectrochemistry of bilayer 12C/13C graphene

摘要

Bilayer graphene was prepared by the subsequent deposition of a 13C single-layer graphene and a 12C single-layer graphene on top of a SiO_2/Si substrate. The bilayer graphene thus prepared was studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The Raman frequencies of the 13C graphene bands are significantly shifted with respect to those of 12C graphene, which allows us to investigate the single layer components of bilayer graphene individually. It is shown that the bottom layer of the bilayer graphene is significantly doped from the substrate, while the top layer does not exhibit a signature of the doping from the environment. The electrochemical doping has the same effect on the charge carrier concentration at the top and the bottom layer despite the top layer being the only layer in contact with the electrolyte. This is here demonstrated by essentially the same frequency shifts of the G and G′ bands as a function of the electrode potential for both the top and bottom layers. Nevertheless, analysis of the intensity of the Raman modes showed an anomalous bleaching of the Raman intensity of the G mode with increasing electrode potential, which was not observed previously in one-layer graphene.