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首页> 外文期刊>Mutation Research: International Journal on Mutagenesis, Chromosome Breakage and Related Subjects >Molecular nature of mutations induced by high-LET irradiation with argon and carbon ions in Arabidopsis thaliana
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Molecular nature of mutations induced by high-LET irradiation with argon and carbon ions in Arabidopsis thaliana

机译:拟南芥中由氩和碳离子的高LET辐射诱导的突变的分子性质

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摘要

Linear energy transfer (LET) is an important parameter to be considered in heavy-ion mutagenesis. However, in plants, no quantitative data are available on the molecular nature of the mutations induced with high-LET radiation above 101-124keVμm -1. In this study, we irradiated dry seeds of Arabidopsis thaliana with Ar and C ions with an LET of 290keVμm -1. We analyzed the DNA alterations caused by the higher-LET radiation. Mutants were identified from the M 2 pools. In total, 14 and 13 mutated genes, including bin2, egy1, gl1, gl2, hy1, hy3-5, ttg1, and var2, were identified in the plants derived from Ar- and C-ions irradiation, respectively. In the mutants from both irradiations, deletion was the most frequent type of mutation; 13 of the 14 mutated genes from the Ar ion-irradiated plants and 11 of the 13 mutated genes from the C ion-irradiated plants harbored deletions. Analysis of junction regions generated by the 2 types of irradiation suggested that alternative non-homologous end-joining was the predominant pathway of repair of break points. Among the deletions, the proportion of large deletions (100bp) was about 54% for Ar-ion irradiation and about 64% for C-ion irradiation. Both current results and previously reported data revealed that the proportions of the large deletions induced by 290-keVμm -1 radiations were higher than those of the large deletions induced by lower-LET radiations (6% for 22.5-30.0keVμm -1 and 27% for 101-124keVμm -1). Therefore, the 290keVμm -1 heavy-ion beams can effectively induce large deletions and will prove useful as novel mutagens for plant breeding and analysis of gene functions, particularly tandemly arrayed genes.
机译:线性能量转移(LET)是重离子诱变中要考虑的重要参数。但是,在植物中,尚无定量数据可用于101-124keVμm-1以上的高LET辐射诱导的突变的分子性质。在这项研究中,我们用Ar和C离子辐照拟南芥的干燥种子,其LET为290keVμm-1。我们分析了由较高LET辐射引起的DNA改变。从M 2库中鉴定出突变体。总共在Ar和C离子辐照的植物中分别鉴定出14和13个突变基因,包括bin2,egy1,gl1,gl2,hy1,hy3-5,ttg1和var2。在两次照射的突变体中,缺失是最常见的突变类型。来自Ar离子辐照植物的14个突变基因中的13个和来自C离子辐照植物的13个突变基因中的11个具有缺失。分析由两种类型的辐射产生的连接区域,表明替代性的非同源末端连接是修复断裂点的主要途径。在缺失中,大缺失(> 100bp)的比例对于Ar离子辐射为约54%,对于C离子辐射为约64%。目前的结果和先前报道的数据均表明,由290-keVμm-1辐射诱导的大缺失的比例高于由较低LET辐射所诱导的大缺失的比例(22.5-30.0keVμm-1的比例为6%,而27%对于101-124keVμm-1)。因此,290keVμm-1重离子束可以有效地诱导大的缺失,并被证明是用于植物育种和基因功能特别是串联排列的基因分析的新型诱变剂。

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