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The electron affinity of Al13H cluster: high level ab initio study

机译:Al13H团簇的电子亲和力:高水平从头算研究

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Al13H clusters have been considered candidates for cluster assembled materials. Here we have carried out benchmark calculations for the Al13H cluster, both neutral and anionic, with the aim of verifying the nature of stationary points on the potential energy surface, studying dynamics of H atom and determining an adiabatic electron affinity. A range of correlated methods applied include second-order perturbation theory (MP2), spin-component-scaled MP2, coupled electron pair (CEPA) and coupled cluster singles and doubles with perturbative triple corrections (CCSD(T)). These methods are used in combination with the correlation consistent basis sets through aug-cc-pVTZ including extrapolation to the complete basis set (CBS) limit. Performance of several different flavours of density functional theory (DFT) such as generalised gradient approximation (GGA), hybrid GGA, meta-GGA and hybrid-meta-GGA is assessed with respect to the ab initio correlated reference data. The harmonic force constant analysis is systematically performed with the MP2 and DFT methods. The MP2 results show that for neutral Al13H only the hollow structure is a potential energy minimum, with the bridged structure being a transition state for the H shift from the hollow site to the adjacent hollow site. The CCSD(T)/aug-cc-pVTZ (CCSD(T)/CBS) estimate of the energy barrier to this H shift is 2.6 (2.9) kcal/mol, implying that the H atom movement over the Al13H cluster surface is facile. By contrast, the DFT force constant analysis results suggest additional terminal and bridged minima structures. For the anion Al13H-, exhibiting 'stiffer' potential energy surface compared to the neutral, the existence of the hollow and terminal isomers is consistent with the earlier photoelectron spectroscopy assignment. The adiabatic electron affinity of Al13H is determined to be 2.00 and 1.95eV (the latter including the Delta ZPE correction) based on the CCSD(T) energies extrapolated to the CBS limit, whereas the respective CCSD(T)/CBS thermodynamic EA values are 2.79 and 2.80eV.
机译:Al13H团簇被认为是团簇组装材料的候选者。在这里,我们已经对Al13H团簇(中性和阴离子)进行了基准计算,目的是验证势能表面上固定点的性质,研究H原子的动力学并确定绝热电子亲和力。所应用的一系列相关方法包括二阶扰动理论(MP2),自旋分量缩放的MP2,耦合电子对(CEPA)以及具有扰动三重校正(CCSD(T))的耦合簇单双。这些方法与通过aug-cc-pVTZ的相关一致基础集结合使用,包括外推到完整基础集(CBS)极限。相对于从头算起的相关参考数据,评估了几种不同功能的密度泛函理论(DFT)的性能,例如广义梯度近似(GGA),混合GGA,meta-GGA和混合元-GGA。谐波力常数分析是使用MP2和DFT方法系统地执行的。 MP2结果表明,对于中性Al13H,只有中空结构是势能最小值,而桥接结构是H从中空位向相邻中空位转移的过渡态。该H位移的能垒的CCSD(T)/ aug-cc-pVTZ(CCSD(T)/ CBS)估计为2.6(2.9)kcal / mol,这意味着Al原子在Al13H团簇表面的移动很容易。相比之下,DFT力常数分析结果表明了附加的末端和桥接最小结构。对于阴离子Al13H-,与中性相比,它显示出“更硬”的势能表面,中空和末端异构体的存在与早期的光电子能谱分配相一致。根据外推到CBS极限的CCSD(T)能量,确定Al13H的绝热电子亲和力为2.00和1.95eV(后者包括Delta ZPE校正),而相应的CCSD(T)/ CBS热力学EA值为2.79和2.80eV。

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