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Photoluminescence Characteristics of Nanocrystalline ZnGa_2O_4 Phosphors Obtained at Different Sintering Temperatures

机译:不同烧结温度下获得的ZnGa_2O_4纳米晶荧光粉的光致发光特性

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摘要

A nano-sized ZnGa_2O_4 phosphor was synthesized via a precipitation method (at a low temperature) and then sintered at various temperatures. X-ray diffraction (XRD) analysis confirmed that single-crystalline ZnGa_2O_4 particles were formed. A pure ZnGa_2O_4 phase was obtained at a sintering temperature of 1000 deg C. The average size of the spherical ZnGa_2O_4-phosphor particles increased with increasing sintering temperature. The most intense photoluminescence (PL) peak -corresponding to blue emission at about 420 nm - was observed for the sample prepared at a sintering temperature of 1000 deg C.
机译:通过沉淀法(在低温下)合成纳米级ZnGa_2O_4磷光体,然后在各种温度下烧结。 X射线衍射(XRD)分析证实形成了单晶ZnGa_2O_4颗粒。在1000℃的烧结温度下获得纯的ZnGa_2O_4相。球形ZnGa_2O_4-磷颗粒的平均尺寸随烧结温度的升高而增加。对于在1000摄氏度的烧结温度下制备的样品,观察到最强的光致发光(PL)峰-对应于约420 nm的蓝色发射。

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