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Diffusion of sodium in single crystal CuInSe2

机译:钠在单晶CuInSe中的扩散2

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摘要

The incorporation of sodium from sodium fluoride in single-crystal CuInSe2 (CIS) is investigated to provide insight into the intra-granular aspects of sodium incorporation in CIS-based thin films. Sodium was incorporated by evaporating NaF onto two CIS crystals of varying compositions and defect structures followed by heating under vacuum. Diffusion profiles show a near-surface reaction before a deeper diffusion zone which follows a complementary error function, confirming Na diffusion into the crystals. Transmission electron microscopy analysis indicates that dislocations do not control the diffusion process. The activation energy of diffusion is similar to 0.7 eV for both crystals. This low activation energy suggests that Na diffusion occurs rapidly through the bulk at temperatures as low as 300 degrees C and helps explain the uniform Na concentration often observed in grain interiors of polycrystalline Cu(InGa)Se-2 thin films. Published by AIP Publishing.
机译:研究了单晶CuInSe2 (CIS)中氟化钠的掺入,以深入了解CIS基薄膜中钠掺入的晶粒内方面。通过将NaF蒸发到两个不同成分和缺陷结构的CIS晶体上,然后在真空下加热来掺入钠。扩散剖面显示,在更深的扩散区之前发生近表面反应,该反应遵循互补误差函数,证实了Na扩散到晶体中。透射电子显微镜分析表明,位错不能控制扩散过程。两种晶体的扩散活化能相似于0.7 eV。这种低活化能表明,在低至300°C的温度下,Na扩散在主体中迅速发生,并有助于解释在多晶Cu(InGa)Se-2薄膜的晶粒内部经常观察到的均匀Na浓度。由AIP Publishing出版。

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