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First principles study of vacancy and tungsten diffusion in fcc cobalt

机译:FCC钴中空位和钨扩散的首要原理研究

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We have studied the energetics of vacancy formation and diffusion in fcc cobalt using periodic density functional theory, both with and without including the surface intrinsic error corrections. Aggregation of vacancies is found to be energetically favorable. The vacancy formation energies, with (without) corrections, are computed to be 2.34 (1.71) eV for an isolated vacancy and 2.28-1.92 (1.65-1.29) eV per vacancy for two to six coalesced vacancies, respectively. The corrected (uncorrected) diffusion barrier of an isolated vacancy is 1.19 (0.98) eV. We have found that vacancy formation energies are over-predicted for Co, Fe and Ni when surface intrinsic error corrections are applied. We have also studied substitutional tungsten diffusion in Co. We have identified two sequential vacancy-mediated W diffusion mechanisms in Co. Corrected (uncorrected) energy barriers for the steps in these mechanisms lie in the range 1.09-1.44 (0.88-1.23) eV.
机译:我们使用周期密度泛函理论研究了fcc钴中空位形成和扩散的能级,包括和不包括表面固有误差校正。发现空缺聚集在能量上是有利的。计算出的空位形成能(不进行校正)对于独立空位为2.34(1.71)eV,对于两个至六个合并空位,每个空位的能量分别为2.28-1.92(1.65-1.29)eV。隔离的空位的校正后(未校正)扩散势垒为1.19(0.98)eV。我们发现,当应用表面固有误差校正时,Co,Fe和Ni的空位形成能被过度预测。我们还研究了Co中的取代钨扩散。我们确定了Co中两个连续的空位介导的W扩散机制。这些机制中步骤的校正(未校正)能垒在1.09-1.44(0.88-1.23)eV范围内。

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