The improvement of global performances of semiconductor devices is often limited by the increase in the resistivity of metallic line interconnections due to grain boundaries. Therefore, the control of the time evolution of the grain boundaries' structures in complex geometries is required. This process is simulated in two dimensions using the vertex dynamics method that has been extensively applied to bulk problems. This work focuses on the evolution of the grain microstructure first in films and then in the Damascene geometry, as a function of the shape of the metallic line and with or without a {1 1 1} growth texture enforced for grains along the interfaces to the substrate.
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