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机译:
机译:Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
机译:Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
机译:Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation
机译:A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory
机译:memory - tradition - history: ties TOT HEPA是tin modern Chinese fiction (lux UN, shi Z和村, S很Cong问, MO y按, Wang an逸).
机译:Corrosion products and mechanism on NiTi shape memory alloy in physiological environment
机译:CRYOELECTRIC RaNDOm aCCEss mEmORY阶段Ⅲ