Improved solid-state DBD for picosecond switch

摘要

We propose a Si-based delayed breakdown diode (DBD) with an improved three-step gradual changing doping structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch. Prom the results of two-dimensional mixed device-circuit simulations and theoretical analysis, several parameters of utmost important on the optimal design of picosecond switch are discussed in detail. Performance comparisons of traditional and improved DBDs are given systematically.