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On the ultrathin gold film used as buffer layer at the transparent conductive anode/organic electron donor interface

机译:在透明导电阳极/有机电子给体界面上用作缓冲层的超薄金膜上

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摘要

Previously, we have shown that a gold thin film of only 0.5 nm introduced at the interface between the indium tin oxide or ZnO anode and the organic electron donor in organic photovoltaic cells induces a strong improvement of the cell efficiency. Of course a thickness of 0.5 nm corresponds only to an averaged thickness, the films being too thin to be continuous. For a clear understanding of the physical mechanisms that are responsible for this improved behaviour, it is important to know the fractional coverage and the island height of this thin Au film. In the present work, we have used two different techniques, such as treated scanning electron microscope images and analysis of the inelastic part of peaks of X-ray photoelectron spectroscopy spectra, to estimate the gold coverage and island height of the transparent conductive anode. There is an excellent agreement between the results achieved by both methods. Only 15% of the anode is covered, which proves the high efficiency of gold as an anode buffer layer in organic photovoltaic devices.
机译:以前,我们已经表明,在有机光伏电池中的铟锡氧化物或ZnO阳极与有机电子给体之间的界面处引入的仅0.5 nm的金薄膜可大大提高电池效率。当然,0.5nm的厚度仅对应于平均厚度,膜太薄而不能连续。为了清楚地了解导致这种行为改善的物理机制,重要的是要知道这种Au薄膜的覆盖率和岛高。在目前的工作中,我们使用了两种不同的技术,例如处理过的扫描电子显微镜图像以及对X射线光电子能谱光谱峰的非弹性部分的分析,来估算透明导电阳极的金覆盖率和岛高。两种方法所获得的结果之间有着极好的一致性。仅覆盖了15%的阳极,这证明了金作为有机光伏器件中的阳极缓冲层具有很高的效率。

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