THE ATTENUATION AND SLOW-WAVE CHARACTERISTICS OF AN INVERTED EMBEDDED (IEM) METAL-INSULATOR SEMICONDUCTOR (MIS) MICROSTRIP LINE

摘要

The attenuation and slow-wave characteristics in an inverted embedded metal-insulator-semiconductor (IEM-MIS) microstrip line are investigated in this paper, based on the extracted frequency-dependent distributed parameters, that is, per-unit-length series resistance and inductance, shunt capacitance, and conductance of the structure. Parametric studies are performed to show the combined effects of different parameters, such as strip thickness, width, conductivity, embedding depth, and silicon conductivity and its thickness, on the mode attenuation constant and slow-wave factor (SWF).