HIGHLY EFFICIENT CLASS-F GaN HEMT DOHERTY AMPLIFIER FOR WCDMA APPLICATIONS

摘要

This article presents a high-efficiency GaN HEMT class-F Doherty amplifier for 2.14-GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6-dB back-off power from Psat) for a single tone. For a one-carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an ACLR of -22.1 dBc (±2.5 MHz offset) at 36.5 dBm, while an ACLR of -35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization.