机译:有限离子温度值的 I-V 探头特性的解析拟合:径向模型适用性的合理性
Departamento de Fisica, Universidad de Cordoba, Campus Universitario de Rabanales, Ed. C2, 14071 Cordoba, Spain;
机译:Analytical fit of the I-V characteristic for cylindrical and spherical Langmuir probes
机译:Analytic Model of I-V Characteristics of 4H-SiC MESFETs Based on Multiparameter Mobility Model
机译:Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET