CLASS F AGAINST TUNED LOAD CONFIGURATION IN DOHERTY POWER AMPLIFIERS

摘要

The experimental results and comparison of two Doherty Power Amplifiers (DPAs) with the Main device designed respectively in a Tuned Load and a Class F configuration are presented. Both DPAs are designed by using GaN HEMT (1 mm of gate periphery) as active device to operate at 2.14 GHz, assuring an almost constant efficiency over the usual Output Back Off range of 6 dB. The experimental results demonstrate the benefit of the Class F solution in a DPA architecture.