机译:InGaN多量子阱发光二极管在AlN/蓝宝石模板上的热稳定性
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan;
机译:Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
机译:Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates
机译:Improved wavelength stability and heat dissipation of InGaN-based light-emitting diodes using a graphene interlayer on patterned sapphire substrate
机译:Inaln / AlN / Ingan / GaN / Sapphire高电子迁移率晶体管结构的光学表征
机译:应变松弛对在具有溅射AlN成核层的4英寸蓝宝石衬底上生长的InGaN / GaN绿色LED的性能的影响
机译:Thermal management and Interfacial properties in High-power GaN-Based Light-Emitting Diodes Employing Diamond-added sn-3 wt.%ag-0.5 wt.%Cu solder as a Die-attach material
机译:用于干蚀刻GaN,alN,InGaN和InalN的等离子体化学物质