首页> 外文期刊>Journal of Applied Physics >Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2
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Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

机译:布里渊区 K 点和 H 点的直接光跃迁,体型 MoS2、MoSe2、WS2 和 WSe2

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Modulated reflectance (contactless electroreflectance (CER), photoreflectance (PR), and piezoreflectance (PzR)) has been applied to study direct optical transitions in bulk MoS2, MoSe2, WS2, and WSe2. In order to interpret optical transitions observed in CER, PR, and PzR spectra, the electronic band structure for the four crystals has been calculated from the first principles within the density functional theory for various points of Brillouin zone including K and H points. It is clearly shown that the electronic band structure at H point of Brillouin zone is very symmetric and similar to the electronic band structure at K point, and therefore, direct optical transitions at H point should be expected in modulated reflectance spectra besides the direct optical transitions at the K point of Brillouin zone. This prediction is confirmed by experimental studies of the electronic band structure of MoS2, MoSe2, WS2, and WSe2 crystals by CER, PR, and PzR spectroscopy, i.e., techniques which are very sensitive to critical points of Brillouin zone. For the four crystals besides the A transition at K point, an AH transition at H point has been observed in CER, PR, and PzR spectra a few tens of meV above the A transition. The spectral difference between A and A(H) transition has been found to be in a very good agreement with theoretical predictions. The second transition at the H point of Brillouin zone (B-H transition) overlaps spectrally with the B transition at K point because of small energy differences in the valence (conduction) band positions at H and K points. Therefore, an extra resonance which could be related to the B-H transition is not resolved in modulated reflectance spectra at room temperature for the four crystals. Published by AIP Publishing.
机译:调制反射率(非接触式电反射率 (CER)、光反射率 (PR) 和压电反射率 (PzR))已被应用于研究体 MoS2、MoSe2、WS2 和 WSe2 中的直接光跃迁。为了解释在CER、PR和PzR光谱中观察到的光学跃迁,根据密度泛函理论中的第一性原理计算了布里渊区各个点(包括K点和H点)的四个晶体的电子能带结构。结果表明,布里渊区H点的电子能带结构与K点的电子能带结构非常对称且相似,因此,除了布里渊区K点的直接光跃迁外,在调制反射光谱中还应预期H点的直接光跃迁。通过CER、PR和PzR光谱对MoS2、MoSe2、WS2和WSe2晶体的电子能带结构进行实验研究,即对布里渊区临界点非常敏感的技术,证实了这一预测。对于除K点的A跃迁外的四种晶体,在比A跃迁高出几十meV的CER、PR和PzR光谱中观察到H点的AH跃迁。A和A(H)跃迁之间的光谱差异与理论预测非常吻合。布里渊区H点的第二个跃迁(B-H跃迁)与K点的B跃迁在光谱上重叠,因为H点和K点的价(导通)带位置的能量差异很小。因此,在室温下,四种晶体的调制反射光谱中无法解决可能与B-H跃迁有关的额外共振。由AIP Publishing出版。

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