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首页> 外文期刊>Microchemical Journal: Devoted to the Application of Microtechniques in all Branches of Science >Determination of silicon in plant materials using direct solid sample analysis with high-resolution continuum source graphite furnace atomic absorption spectrometry
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Determination of silicon in plant materials using direct solid sample analysis with high-resolution continuum source graphite furnace atomic absorption spectrometry

机译:使用高分辨率连续谱源石墨炉原子吸收光谱法直接固体样品分析法测定植物材料中的硅

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In this work, a method for the determination of silicon in plant material by high-resolution continuum source graphite furnace atomic absorption spectrometry has been developed using direct solid sample analysis. The performance of iridium and rhodium as permanent modifiers alone and combined with the palladium-magnesium modifier in solution was investigated. According to the results, among the investigated modifiers, an improvement in sensitivity and Si signal profile was obtained using 300 mu g of Rh in combination with 20 mu g of Pd + 12 mu g of Mg. The optimized pyrolysis and atomization temperatures were 1200 and 2650 degrees C, respectively. Due to the high content of Si in most of the evaluated samples, the analytical line of 221.174 nm was chosen. Moreover, an adequate working range (30 to 600 ng Si) was achieved after using a minimum gas flow in the atomization stage and the integrated absorbance of the center pixel only. The sample mass varied between 0.03 and 0.50 mg, and no spectral interferences were encountered. The limit of detection was 5 ng mg(-1) and the limit of quantification 17 ng mg(-1), both were calculated according to the maximum sample mass of 0.50 mg. The Si content investigated in ten plant samples varied between 0.5 and 20 mu g mg(-1). The accuracy of the method was evaluated using the certified reference materials NCS ZC73014 (Trace elements in Tea) and NCS ZC73349 (Bush Branches and Leaves) and results presented no significant difference between the certified and found concentrations. Therefore, the obtained results prove that an accurate method has been developed and it could be applied to analyze different plant materials with levels varying in a wide range, with minimum of pretreatment. (C) 2015 Elsevier B.V. All rights reserved.
机译:在这项工作中,已经开发了使用直接固体样品分析通过高分辨率连续谱源石墨炉原子吸收光谱法测定植物材料中硅的方法。研究了铱和铑单独作为永久性改性剂以及与钯-镁改性剂结合在溶液中的性能。根据结果​​,在所研究的改性剂中,使用300μgRh与20μgPd + 12μgMg组合可获得灵敏度和Si信号分布的改善。优化的热解温度和雾化温度分别为1200和2650摄氏度。由于大多数评估样品中的Si含量高,因此选择了221.174 nm的分析线。此外,在雾化阶段使用最小的气体流量和仅中心像素的积分吸收率后,即可获得足够的工作范围(30至600 ng Si)。样品质量在0.03和0.50 mg之间变化,并且没有遇到光谱干扰。检测限为5 ng mg(-1),定量限为17 ng mg(-1),两者均根据最大样品质量0.50 mg计算。在十个植物样品中调查的Si含量在0.5至20μgmg(-1)之间变化。使用认证参考材料NCS ZC73014(茶叶中的痕量元素)和NCS ZC73349(灌木枝和树叶)评估了该方法的准确性,结果表明认证浓度与实测浓度之间无显着差异。因此,所获得的结果证明了已经开发出一种准确的方法,并且可以将其用于分析水平范围宽广而无需预处理的不同植物材料。 (C)2015 Elsevier B.V.保留所有权利。

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