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Electro-Deposition Behaviors of Trivalent Chromium during Pulse Plating

机译:电镀过程中三价铬的电沉积行为

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Thick trivalent chromium layers were prepared in a modified chromium sulfate bath by pulse plating to replace hexavalent hard chromium coating in industrial fields; layer microstructure development was systematically studied by using electron microscopy and small angle neutron scattering (SANS) to give a model for nucleation and growth behaviors during the pulse plating. Finer columnar grain was formed by pulse plating due to its high nucleation rate at the same current density. Average deposition rate of the trivalent chromium layers is in the range of 32.4 um/h to 49.7 um/h. The deposition rate increases as the diameter of cylindrical shape of chromium cluster in a columnar grain is reduced. The highest deposition rate in this study was observed under the conditions of direct current density of 0.4 Acnf , combined with a rectangular shape pulse current density of 1.5 Acm~(-2) with a 10/2 on-offtime ratio. Most of the inner-cracks of the trivalent chromium layers have dimensions in the range of about 39 nm. Ultrasonic agitation during pulse plating resulted in an increase of neutral salt fog spray life, which is related to smaller crack size and broader size distribution in the trivalent chromium.
机译:在改良的硫酸铬浴中通过脉冲电镀法制备厚的三价铬层,以代替工业领域中的六价硬铬涂层。利用电子显微镜和小角度中子散射(SANS)系统地研究了层的微观结构发展,从而为脉冲镀覆过程中的形核和生长行为提供了模型。由于在相同的电流密度下具有高的成核速率,因此通过脉冲电镀形成了更细的柱状晶粒。三价铬层的平均沉积速率在32.4um / h至49.7um / h的范围内。随着柱状晶粒中铬簇的圆柱形状的直径减小,沉积速率增加。在直流密度为0.4 Acnf,矩形电流密度为1.5 Acm〜(-2),开/关比为10/2的条件下,观察到了最高的沉积速率。三价铬层的大多数内裂纹的尺寸在约39nm的范围内。脉冲电镀过程中的超声搅拌导致中性盐雾喷雾寿命的增加,这与三价铬中较小的裂纹尺寸和较宽的尺寸分布有关。

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