Isolation spectra for quantum‐well laser diode optical switches

摘要

The spectral dependence of isolation characteristics for quantum‐well laser diode optical switches, which are the level difference between the ON and OFF state attenuation, are calculated forp‐ andn‐type quantum‐well InGaAsP/InP using a semiclassical density‐matrix analysis. The results show thatp‐type materials, which have rather large background carrier concentration, are suitable for large gain and high isolation optical switches. Broadband laser diode optical switches with a gain region of 1.3–1.55 mgr;m can be obtained.