Crystal orientation and temperature effects on Pd2Sihyphen;Si Schottkyhyphen;barrier diodes formed by solidhyphen;phase epitaxy

摘要

Silicon solidhyphen;phase epitaxy utilizing Pd2Si as a transport medium is shown to be dependent on the substrate orientation and postepitaxial heathyphen;treatment temperature. It is demonstrated that devices fabricated on (1hyphen;0hyphen;0) substrates are superior to devices made on (1hyphen;1hyphen;1) substrates.